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PN3646
PN3646
NPN Switching Transistor
* Sourced from process 22.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * Ta=25C unless otherwise noted
Symbol VCEO VCBO VEBO IC TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continued Operating and Storage Junction Temperature Range Value 15 40 5.0 300 - 55 ~ 150 Units V V V mA C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Off Characteristics BV(BR)CEO BV(BR)CES BV(BR)CBO BV(BR)EBO ICES Parameter Test Condition IC = 10mA, IB = 0 IC = 100A, VBE = 0 IC = 100A, IE = 0 IE = 100A, IC = 0 VCE = 20V, VBE = 0 VCE = 20V, VBE = 0, Ta = 65C VCE = 0.4V, IC = 30mA VCE = 0.5V, IC = 100mA VCE = 1.0V, IC = 300mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA VCB = 5.0V, IE = 0, f = 1MHz VCB = 5.0V, IC = 0, f = 1MHz IC = 300mA, VCE = 10V, f = 100MHz 3.5 0.73 30 25 15 Min. 15 40 40 5.0 0.5 3.0 120 Max. Units V V V V A A Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current
On Characteristics * hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
0.2 0.28 0.5 0.95 1.2 1.7 5.0 8.0
V V V V V V pF pF
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics Ccb Ceb hfe Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
(c)2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
PN3646
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Switching Characteristics ts ton toff Storage Time Turn-On Time Turn-Off Time
(Continued)
Test Condition IC = 300mA, VCC = 10V IB1 = IB2 = 30mA
Min.
Max. 20 18 28
Units ns ns ns
Thermal Characteristics Ta=25C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/C C/W
(c)2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
PN3646
Package Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. A, October 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I13

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